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Doping Materials Selected: To form the transistors, however, we must diffuse doping materials selected materials in selected areas only, not over the entire surface. Selective diffusion is accomplished in the following manner: Because the silicon dioxide film covering the wafer prevents the gaseous doping materials selected material from penetrating into the silicon, it is necessary to selectively etch openings into this film so that diffusion will occur only in the desired areas.
Materials selected from 44.31.2 are not to be used at temperatures lower than those indicated in 44.31.9 and are to be tested at temperatures at least 5.5C (10F) below the minimum design service temperature. Where the test temperature is determined to be below — 196C (-320F), testing may be conducted at -196C (-320F).
If patterned materials are to be selected, the most minute attention must be given to the character, subject matter, and scale of the pattern, so that it will be suitable to the character, use, and size of the room. When several rooms are so arranged that they may easily be seen together, as is sometimes the case in apartments, their color schemes may be linked by the use of similar colors in each room in a different arrangement or quantity. |
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